FF1000UXTR23T2M1PBPSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: FF1000UXTR23T2M1PBPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 1.185kA
Input Capacitance (Ciss) (Max) @ Vds: 190000pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 1.19mOhm @ 2kA, 15V
Gate Charge (Qg) (Max) @ Vgs: 5.3µC @ 15V
Vgs(th) (Max) @ Id: 5.15V @ 900mA
Supplier Device Package: AG-XHP2K17
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Технічний опис FF1000UXTR23T2M1PBPSA1 Infineon Technologies
Description: FF1000UXTR23T2M1PBPSA1, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 20mW, Drain to Source Voltage (Vdss): 2300V (2.3kV), Current - Continuous Drain (Id) @ 25°C: 1.185kA, Input Capacitance (Ciss) (Max) @ Vds: 190000pF @ 1.5kV, Rds On (Max) @ Id, Vgs: 1.19mOhm @ 2kA, 15V, Gate Charge (Qg) (Max) @ Vgs: 5.3µC @ 15V, Vgs(th) (Max) @ Id: 5.15V @ 900mA, Supplier Device Package: AG-XHP2K17.
Інші пропозиції FF1000UXTR23T2M1PBPSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FF1000UXTR23T2M1PBPSA1 | Виробник : Infineon Technologies |
MOSFET Modules CoolSiC MOSFET half-bridge module 2300 V |
товару немає в наявності |