FF100R12YT3B60BOMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 140A 1650W
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 1650 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 140 A
Part Status: Active
IGBT Type: Trench
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 5+ | 4302.36 грн |
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Технічний опис FF100R12YT3B60BOMA1 Infineon Technologies
Description: IGBT MODULE 1200V 140A 1650W, Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V, Current - Collector Cutoff (Max): 3 mA, Power - Max: 1650 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 140 A, Part Status: Active, IGBT Type: Trench, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A, Operating Temperature: -40°C ~ 125°C (TJ), Configuration: Half Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.