FF1200R12IE5BPSA1 Infineon Technologies


Infineon-FF1200R12IE5-DS-v03_00-EN.pdf?fileId=5546d46259d9a4bf015a1d74b60a25ad
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 2400A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 65.5 nF @ 25 V
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термін постачання 21-31 дні (днів)
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Технічний опис FF1200R12IE5BPSA1 Infineon Technologies

Description: IGBT MOD 1200V 2400A 20MW, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 175°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1200A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 2400 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 20 mW, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 65.5 nF @ 25 V.