Технічний опис FF1400R12IP4BOSA1 Infineon Technologies
Description: IGBT MOD 1200V 1400A 765000W MOD, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1400A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 1400 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 765000 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 82 nF @ 25 V.
Інші пропозиції FF1400R12IP4BOSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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FF1400R12IP4BOSA1 | Виробник : Infineon Technologies |
Trans IGBT Module N-CH 1200V 1.4KA 7650W 12-Pin PRIME3-1 Tray |
товару немає в наявності |
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FF1400R12IP4BOSA1 | Виробник : Infineon Technologies |
Description: IGBT MOD 1200V 1400A 765000W MODPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1400A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 1400 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 765000 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 82 nF @ 25 V |
товару немає в наявності |

