Продукція > INFINEON TECHNOLOGIES > FF200R17KE3HOSA1
FF200R17KE3HOSA1

FF200R17KE3HOSA1 Infineon Technologies

Infineon-FF200R17KE3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b42fcc6c4d9c
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 310A 1250W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
1+9961.56 грн
10+8505.76 грн
В кошику  од. на суму  грн.
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Технічний опис FF200R17KE3HOSA1 Infineon Technologies

Description: IGBT MOD 1700V 310A 1250W MOD, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 310 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 1250 W, Current - Collector Cutoff (Max): 3 mA, Input Capacitance (Cies) @ Vce: 18 nF @ 25 V.