FF225R12ME4PBPSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 450A MODULE
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 450 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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Технічний опис FF225R12ME4PBPSA1 Infineon Technologies
Description: IGBT MODULE 1200V 450A MODULE, Input Capacitance (Cies) @ Vce: 13 nF @ 25 V, Current - Collector Cutoff (Max): 3 mA, Power - Max: 20 mW, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 450 A, Part Status: Active, IGBT Type: Trench Field Stop, Supplier Device Package: Module, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Half Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.
Інші пропозиції FF225R12ME4PBPSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
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FF225R12ME4PBPSA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 450A MODULE Input Capacitance (Cies) @ Vce: 13 nF @ 25 V Current - Collector Cutoff (Max): 3 mA Power - Max: 20 mW Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 450 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: Module NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Half Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 6 шт В кошику од. на суму грн. |
 |
FF225R12ME4PBPSA1 | Infineon Technologies |
IGBT Modules 1200 V, 225 A dual IGBT module |
товару немає в наявності |
В кошику од. на суму грн. |
| FF225R12ME4PBPSA1 |
|
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 450A MODULE
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 450 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: IGBT MODULE 1200V 450A MODULE
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 450 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 6 шт
В кошику
од. на суму грн.
| FF225R12ME4PBPSA1 |
|
Виробник: Infineon Technologies
IGBT Modules 1200 V, 225 A dual IGBT module
IGBT Modules 1200 V, 225 A dual IGBT module
товару немає в наявності
В кошику
од. на суму грн.