Технічний опис FF2MR12W3M1HB11BPSA1 Infineon Technologies
Description: INFINEON - FF2MR12W3M1HB11BPSA1 - Siliziumkarbid-MOSFET, Halbbrücke, Zweifach n-Kanal, 400 A, 1.2 kV, 1440 µohm, Modul, tariffCode: 85412900, Drain-Source-Spannung Vds: 1.2kV, rohsCompliant: YES, Dauer-Drainstrom Id: 400A, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 4.3V, MOSFET-Modul-Konfiguration: Halbbrücke, euEccn: NLR, Verlustleistung: 20mW, Bauform - Transistor: Modul, Anzahl der Pins: 52Pin(s), Produktpalette: EasyPACK CoolsiC Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: Zweifach n-Kanal, Rds(on)-Prüfspannung: 18V, Betriebstemperatur, max.: 125°C, Drain-Source-Durchgangswiderstand: 1440µohm, SVHC: No SVHC (25-Jun-2025).
Інші пропозиції FF2MR12W3M1HB11BPSA1 за ціною від 35991.10 грн до 41205.33 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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FF2MR12W3M1HB11BPSA1 | INFINEON |
 Description: INFINEON - FF2MR12W3M1HB11BPSA1 - Siliziumkarbid-MOSFET, Halbbrücke, Zweifach n-Kanal, 400 A, 1.2 kV, 1440 µohm, ModultariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 400A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.3V MOSFET-Modul-Konfiguration: Halbbrücke euEccn: NLR Verlustleistung: 20mW Bauform - Transistor: Modul Anzahl der Pins: 52Pin(s) Produktpalette: EasyPACK CoolsiC Series productTraceability: Yes-Date/Lot Code Kanaltyp: Zweifach n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 125°C Drain-Source-Durchgangswiderstand: 1440µohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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FF2MR12W3M1HB11BPSA1 | Infineon Technologies |
Description: MOSFET 4N-CH 1200V AG-EASY3B Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 400A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 48400pF @ 800V Rds On (Max) @ Id, Vgs: 2.27mOhm @ 400A, 18V Gate Charge (Qg) (Max) @ Vgs: 1600nC @ 18V Vgs(th) (Max) @ Id: 5.15V @ 224mA Supplier Device Package: AG-EASY3B Part Status: Active |
на замовлення 17 шт: термін постачання 21-31 дні (днів) |
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Виробник: INFINEON
Description: INFINEON - FF2MR12W3M1HB11BPSA1 - Siliziumkarbid-MOSFET, Halbbrücke, Zweifach n-Kanal, 400 A, 1.2 kV, 1440 µohm, Modul
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 400A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.3V
MOSFET-Modul-Konfiguration: Halbbrücke
euEccn: NLR
Verlustleistung: 20mW
Bauform - Transistor: Modul
Anzahl der Pins: 52Pin(s)
Produktpalette: EasyPACK CoolsiC Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: Zweifach n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 125°C
Drain-Source-Durchgangswiderstand: 1440µohm
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - FF2MR12W3M1HB11BPSA1 - Siliziumkarbid-MOSFET, Halbbrücke, Zweifach n-Kanal, 400 A, 1.2 kV, 1440 µohm, Modul
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 400A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.3V
MOSFET-Modul-Konfiguration: Halbbrücke
euEccn: NLR
Verlustleistung: 20mW
Bauform - Transistor: Modul
Anzahl der Pins: 52Pin(s)
Produktpalette: EasyPACK CoolsiC Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: Zweifach n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 125°C
Drain-Source-Durchgangswiderstand: 1440µohm
SVHC: No SVHC (25-Jun-2025)
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 35991.10 грн |
| FF2MR12W3M1HB11BPSA1 |
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Виробник: Infineon Technologies
Description: MOSFET 4N-CH 1200V AG-EASY3B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 48400pF @ 800V
Rds On (Max) @ Id, Vgs: 2.27mOhm @ 400A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1600nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 224mA
Supplier Device Package: AG-EASY3B
Part Status: Active
Description: MOSFET 4N-CH 1200V AG-EASY3B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 48400pF @ 800V
Rds On (Max) @ Id, Vgs: 2.27mOhm @ 400A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1600nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 224mA
Supplier Device Package: AG-EASY3B
Part Status: Active
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 41205.33 грн |