FF300R07KE4HOSA1

FF300R07KE4HOSA1 Infineon Technologies


Infineon-FF300R07KE4-DS-v02_00-en_de.pdf?fileId=db3a30432dbf3762012dc6c33cc835ac Виробник: Infineon Technologies
Description: IGBT MODULE 650V 940W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
на замовлення 3 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+9230.15 грн
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Технічний опис FF300R07KE4HOSA1 Infineon Technologies

Description: IGBT MODULE 650V 940W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 940 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 19 nF @ 25 V.