FF3MR20KM1HPHPSA1 Infineon Technologies

Description: MOSFET 2N-CH 2000V AG-62MMHB, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 2000V (2kV), Current - Continuous Drain (Id) @ 25°C: 325A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 48200pF @ 1200V, Rds On (Max) @ Id, Vgs: 4mOhm @ 400A, 18V, Gate Charge (Qg) (Max) @ Vgs: 1560nC @ 18V, NTC Thermistor: No, Vgs(th) (Max) @ Id: 5.15V @ 224mA, Supplier Device Package: AG-62MMHB, IGBT Type: Trench Field Stop, Voltage - Collector Emitter Breakdown (Max): 2000 V.