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FF450R12KE4EHOSA1

FF450R12KE4EHOSA1 Infineon Technologies

Infineon-FF450R12KE4_E-DS-v02_00-en_de.pdf?fileId=db3a304344d727a80144dfdce80e0c42
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 520A 2400W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 520 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2400 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
1+9292.33 грн
В кошику  од. на суму  грн.
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Технічний опис FF450R12KE4EHOSA1 Infineon Technologies

Description: IGBT MOD 1200V 520A 2400W MOD, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 520 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 2400 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 28 nF @ 25 V.