FF450R12ME4 Infineon Technologies

Description: INSULATED GATE BIPOLAR TRANSISTO, Power - Max: 20 mW, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 450 A, Part Status: Active, IGBT Type: Trench Field Stop, Supplier Device Package: AG-ECONOD, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Half Bridge Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk, Input Capacitance (Cies) @ Vce: 28 nF @ 25 V, Current - Collector Cutoff (Max): 3 mA.