FF45MR12W1M1B11BOMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 1200V AG-EASY1BM-2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ)
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1BM-2
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Технічний опис FF45MR12W1M1B11BOMA1 Infineon Technologies
Description: MOSFET 2N-CH 1200V AG-EASY1BM-2, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 25A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V, Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ), Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V, Vgs(th) (Max) @ Id: 5.55V @ 10mA, Supplier Device Package: AG-EASY1BM-2, Part Status: Obsolete.
Інші пропозиції FF45MR12W1M1B11BOMA1
| Фото | Назва | Виробник | Інформація | Доступність | _PRICE_WITHOUT_VAT | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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FF45MR12W1M1B11BOMA1 | INFINEON TECHNOLOGIES |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A Case: AG-EASY1BM-2 Electrical mounting: Press-Fit Mechanical mounting: screw Semiconductor structure: transistor/transistor Polarisation: unipolar Gate-source voltage: -10...20V On-state resistance: 45mΩ Technology: CoolSiC™; SiC Drain current: 25A Pulsed drain current: 50A Drain-source voltage: 1.2kV Topology: MOSFET half-bridge; NTC thermistor Type of semiconductor module: MOSFET transistor |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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FF45MR12W1M1B11BOMA1 | Infineon Technologies |
Discrete Semiconductor Modules LOW POWER EASY |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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| FF45MR12W1M1B11BOMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Case: AG-EASY1BM-2
Electrical mounting: Press-Fit
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Polarisation: unipolar
Gate-source voltage: -10...20V
On-state resistance: 45mΩ
Technology: CoolSiC™; SiC
Drain current: 25A
Pulsed drain current: 50A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge; NTC thermistor
Type of semiconductor module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Case: AG-EASY1BM-2
Electrical mounting: Press-Fit
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Polarisation: unipolar
Gate-source voltage: -10...20V
On-state resistance: 45mΩ
Technology: CoolSiC™; SiC
Drain current: 25A
Pulsed drain current: 50A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge; NTC thermistor
Type of semiconductor module: MOSFET transistor
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 4682.05 грн |
| FF45MR12W1M1B11BOMA1 |
|
Виробник: Infineon Technologies
Discrete Semiconductor Modules LOW POWER EASY
Discrete Semiconductor Modules LOW POWER EASY
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 6109.75 грн |
| 10+ | 5457.21 грн |
| 24+ | 4744.71 грн |