FF4MR20KM1HHPSA1 Infineon Technologies

Description: SIC 2N-CH 2000V AG-62MMHB, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel, Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 2000V (2kV), Current - Continuous Drain (Id) @ 25°C: 280A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 36100pF @ 1.2kV, Rds On (Max) @ Id, Vgs: 5.3mOhm @ 300A, 18V, Gate Charge (Qg) (Max) @ Vgs: 1170nC @ 18V, FET Feature: Silicon Carbide (SiC), Vgs(th) (Max) @ Id: 5.15V @ 168mA, Supplier Device Package: AG-62MMHB.