FF6MR12KM1PHOSA1 Infineon Technologies

Description: MOSFET 2N-CH 1200V 250A AG-62MM, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 250A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V, Rds On (Max) @ Id, Vgs: 5.81mOhm @ 250A, 15V, Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V, Vgs(th) (Max) @ Id: 5.15V @ 80mA, Supplier Device Package: AG-62MM.