FF6MR12W2M1PB11BPSA1 Infineon Technologies

Description: MOSFET 2N-CH 1200V 200A, Part Status: Obsolete, Vgs(th) (Max) @ Id: 5.55V @ 80mA, Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V, Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V, Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V, Current - Continuous Drain (Id) @ 25°C: 200A (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.