FF900R12IP4DBOSA2 Infineon Technologies

Description: IGBT MOD 1200V 900A 5100W, Packaging: Tray, Input Capacitance (Cies) @ Vce: 54 nF @ 25 V, Current - Collector Cutoff (Max): 5 mA, Power - Max: 5100 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 900 A, Part Status: Active, IGBT Type: Trench Field Stop, Supplier Device Package: Module, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A, Operating Temperature: -40°C ~ 150°C, Configuration: 2 Independent, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module.