Технічний опис FFA40UP35STU ON Semiconductor / Fairchild
Description: DIODE GEN PURP 350V 40A TO3PN, Current - Reverse Leakage @ Vr: 100 µA @ 350 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 40 A, Voltage - DC Reverse (Vr) (Max): 350 V, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: TO-3PN, Current - Average Rectified (Io): 40A, Technology: Standard, Reverse Recovery Time (trr): 55 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.
Інші пропозиції FFA40UP35STU
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FFA40UP35STU | Виробник : onsemi |
 Description: DIODE GEN PURP 350V 40A TO3PNCurrent - Reverse Leakage @ Vr: 100 µA @ 350 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 40 A Voltage - DC Reverse (Vr) (Max): 350 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-3PN Current - Average Rectified (Io): 40A Technology: Standard Reverse Recovery Time (trr): 55 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
товару немає в наявності |