| Кількість | Ціна |
|---|---|
| 3+ | 139.02 грн |
| 10+ | 96.64 грн |
| 100+ | 66.33 грн |
| 500+ | 58.96 грн |
| 1000+ | 55.52 грн |
Відгуки про товар
Написати відгук
Технічний опис FFSD0665B onsemi
Description: DIODE SIL CARB 650V 9.1A DPAK, Packaging: Cut Tape (CT), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 259pF @ 1V, 100kHz, Current - Average Rectified (Io): 9.1A, Supplier Device Package: TO-252 (DPAK), Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Інші пропозиції FFSD0665B за ціною від 66.00 грн до 249.52 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FFSD0665B | onsemi |
 Description: DIODE SIL CARB 650V 9.1A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 259pF @ 1V, 100kHz Current - Average Rectified (Io): 9.1A Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
на замовлення 879 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
|
FFSD0665B | onsemi |
Description: DIODE SIL CARB 650V 9.1A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 259pF @ 1V, 100kHz Current - Average Rectified (Io): 9.1A Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
на замовлення 2220 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
| FFSD0665B | ON Semiconductor |
|
на замовлення 2450 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| FFSD0665B |
|
Виробник: onsemi
Description: DIODE SIL CARB 650V 9.1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 259pF @ 1V, 100kHz
Current - Average Rectified (Io): 9.1A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARB 650V 9.1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 259pF @ 1V, 100kHz
Current - Average Rectified (Io): 9.1A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 879 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 203.80 грн |
| 10+ | 126.93 грн |
| 100+ | 87.28 грн |
| 500+ | 66.00 грн |
| FFSD0665B |
|
Виробник: onsemi
Description: DIODE SIL CARB 650V 9.1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 259pF @ 1V, 100kHz
Current - Average Rectified (Io): 9.1A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARB 650V 9.1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 259pF @ 1V, 100kHz
Current - Average Rectified (Io): 9.1A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 2220 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 249.52 грн |
| 10+ | 165.36 грн |
| 100+ | 120.50 грн |
| 500+ | 94.59 грн |
| 1000+ | 91.65 грн |
| FFSD0665B |
|
Виробник: ON Semiconductor
на замовлення 2450 шт:
термін постачання 14-28 дні (днів)