Технічний опис FFSH3065B-F085 onsemi
Description: DIODE SIL CARB 650V 37A TO247-2, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1260pF @ 1V, 100kHz, Current - Average Rectified (Io): 37A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V, Qualification: AEC-Q101.
Інші пропозиції FFSH3065B-F085 за ціною від 284.23 грн до 1063.17 грн
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FFSH3065B-F085 | onsemi |
 Description: DIODE SIL CARB 650V 37A TO247-2Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1260pF @ 1V, 100kHz Current - Average Rectified (Io): 37A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V Qualification: AEC-Q101 |
на замовлення 1572 шт: термін постачання 21-31 дні (днів) |
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FFSH3065B-F085 | onsemi |
Description: DIODE SIL CARB 650V 37A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1260pF @ 1V, 100kHz Current - Average Rectified (Io): 37A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V Qualification: AEC-Q101 |
на замовлення 2308 шт: термін постачання 21-31 дні (днів) |
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| FFSH3065B-F085 | ON Semiconductor |
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на замовлення 345 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| FFSH3065B-F085 |
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Виробник: onsemi
Description: DIODE SIL CARB 650V 37A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1260pF @ 1V, 100kHz
Current - Average Rectified (Io): 37A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 37A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1260pF @ 1V, 100kHz
Current - Average Rectified (Io): 37A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
на замовлення 1572 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 731.51 грн |
| 30+ | 417.85 грн |
| 120+ | 354.93 грн |
| 510+ | 289.85 грн |
| 1020+ | 284.23 грн |
| FFSH3065B-F085 |
|
Виробник: onsemi
Description: DIODE SIL CARB 650V 37A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1260pF @ 1V, 100kHz
Current - Average Rectified (Io): 37A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 37A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1260pF @ 1V, 100kHz
Current - Average Rectified (Io): 37A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
на замовлення 2308 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1063.17 грн |
| 30+ | 626.79 грн |
| 120+ | 539.92 грн |
| 510+ | 462.21 грн |
| FFSH3065B-F085 |
|
Виробник: ON Semiconductor
на замовлення 345 шт:
термін постачання 14-28 дні (днів)