FGA15N120ANTDTU

Виробник: onsemi
Description: IGBT NPT/TRENCH 1200V 30A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 330 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: TO-3P
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 15ns/160ns
Switching Energy: 3mJ (on), 600µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 186 W

Виробник: onsemi / Fairchild
IGBT Transistors 1200V NPT Trench IGBT