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Технічний опис FGA15S125P onsemi / Fairchild
Description: INSULATED GATE BIPOLAR TRANSISTO, Packaging: Bulk, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.72V @ 15V, 15A, Supplier Device Package: TO-3P, IGBT Type: Trench, Gate Charge: 129 nC, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 1250 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 136 W.
Інші пропозиції FGA15S125P
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
FGA15S125P | Fairchild Semiconductor |
Description: INSULATED GATE BIPOLAR TRANSISTOPackaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.72V @ 15V, 15A Supplier Device Package: TO-3P IGBT Type: Trench Gate Charge: 129 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1250 V Current - Collector Pulsed (Icm): 45 A Power - Max: 136 W |
товару немає в наявності |
В кошику од. на суму грн. |
|
FGA15S125P | onsemi |
Description: IGBT TRENCH 1250V 30A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.72V @ 15V, 15A Supplier Device Package: TO-3P IGBT Type: Trench Gate Charge: 129 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1250 V Current - Collector Pulsed (Icm): 45 A Power - Max: 136 W |
товару немає в наявності |
В кошику од. на суму грн. |
| FGA15S125P |
![]() |
Виробник: Fairchild Semiconductor
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.72V @ 15V, 15A
Supplier Device Package: TO-3P
IGBT Type: Trench
Gate Charge: 129 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 136 W
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.72V @ 15V, 15A
Supplier Device Package: TO-3P
IGBT Type: Trench
Gate Charge: 129 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 136 W
товару немає в наявності
В кошику
од. на суму грн.
| FGA15S125P |
![]() |
Виробник: onsemi
Description: IGBT TRENCH 1250V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.72V @ 15V, 15A
Supplier Device Package: TO-3P
IGBT Type: Trench
Gate Charge: 129 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 136 W
Description: IGBT TRENCH 1250V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.72V @ 15V, 15A
Supplier Device Package: TO-3P
IGBT Type: Trench
Gate Charge: 129 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 136 W
товару немає в наявності
В кошику
од. на суму грн.




