FGA40T65SHDF - Транзисторы - IGBT
Техническое описание FGA40T65SHDF
Цена FGA40T65SHDF от 105.45 грн до 195.85 грн
FGA40T65SHDF Производитель: Rochester Electronics, LLC Description: INSULATED GATE BIPOLAR TRANSISTO Test Condition: 400V, 40A, 6Ohm, 15V Td (on/off) @ 25°C: 18ns/64ns Gate Charge: 68nC Input Type: Standard Switching Energy: 1.22mJ (on), 440µJ (off) Power - Max: 268W Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 40A Current - Collector Pulsed (Icm): 120A Current - Collector (Ic) (Max): 80A Voltage - Collector Emitter Breakdown (Max): 650V IGBT Type: Trench Field Stop Part Status: Active Packaging: Bulk Brand: Fairchild Semiconductor Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Reverse Recovery Time (trr): 101ns ![]() |
под заказ 444 шт ![]() срок поставки 5-15 дня (дней) |
|
|
||||||||
FGA40T65SHDF Производитель: ON Semiconductor / Fairchild IGBT Transistors FS3TIGBT TO3PN 40A 650V ![]() |
под заказ 194 шт ![]() срок поставки 7-21 дня (дней) |
|
|
||||||||
FGA40T65SHDF Производитель: ON Semiconductor Description: IGBT TRENCH/FS 650V 80A TO3PN Packaging: Tube Part Status: Active IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 40A Power - Max: 268W Switching Energy: 1.22mJ (on), 440µJ (off) Input Type: Standard Gate Charge: 68nC Td (on/off) @ 25°C: 18ns/64ns Test Condition: 400V, 40A, 6Ohm, 15V Reverse Recovery Time (trr): 101ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3PN Base Part Number: FGA40 ![]() |
товар отсутствует, Вы можете сделать запрос добавив товар в корзину |
|