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Технічний опис FGA5065ADF onsemi / Fairchild
Description: INSULATED GATE BIPOLAR TRANSISTO, Switching Energy: 1.35mJ (on), 309µJ (off), Td (on/off) @ 25°C: 20.8ns/62.4ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-3PN, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A, Reverse Recovery Time (trr): 31.8 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Bulk, Power - Max: 268 W, Current - Collector Pulsed (Icm): 150 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 100 A, Part Status: Active, Gate Charge: 72.2 nC, Test Condition: 400V, 50A, 6Ohm, 15V.
Інші пропозиції FGA5065ADF за ціною від 196.55 грн до 196.55 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||
|---|---|---|---|---|---|---|---|
| FGA5065ADF | Fairchild Semiconductor |
Description: INSULATED GATE BIPOLAR TRANSISTOSwitching Energy: 1.35mJ (on), 309µJ (off) Td (on/off) @ 25°C: 20.8ns/62.4ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PN Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Reverse Recovery Time (trr): 31.8 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Bulk Power - Max: 268 W Current - Collector Pulsed (Icm): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 100 A Part Status: Active Gate Charge: 72.2 nC Test Condition: 400V, 50A, 6Ohm, 15V |
на замовлення 325 шт: термін постачання 21-31 дні (днів) |
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| FGA5065ADF | ON Semiconductor |
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на замовлення 2250 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| FGA5065ADF |
![]() |
Виробник: Fairchild Semiconductor
Description: INSULATED GATE BIPOLAR TRANSISTO
Switching Energy: 1.35mJ (on), 309µJ (off)
Td (on/off) @ 25°C: 20.8ns/62.4ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Reverse Recovery Time (trr): 31.8 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Bulk
Power - Max: 268 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
Gate Charge: 72.2 nC
Test Condition: 400V, 50A, 6Ohm, 15V
Description: INSULATED GATE BIPOLAR TRANSISTO
Switching Energy: 1.35mJ (on), 309µJ (off)
Td (on/off) @ 25°C: 20.8ns/62.4ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Reverse Recovery Time (trr): 31.8 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Bulk
Power - Max: 268 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
Gate Charge: 72.2 nC
Test Condition: 400V, 50A, 6Ohm, 15V
на замовлення 325 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 111+ | 196.55 грн |
| FGA5065ADF |
![]() |
Виробник: ON Semiconductor
на замовлення 2250 шт:
термін постачання 14-28 дні (днів)


