Технічний опис FGA6065ADF ON Semiconductor / Fairchild
Description: IGBT TRENCH/FS 650V 120A TO3PN, Power - Max: 306 W, Current - Collector Pulsed (Icm): 180 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 120 A, Part Status: Obsolete, Gate Charge: 84 nC, Test Condition: 400V, 60A, 6Ohm, 15V, Switching Energy: 2.46mJ (on), 520µJ (off), Td (on/off) @ 25°C: 25.6ns/71ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-3PN, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A, Reverse Recovery Time (trr): 110 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.
Інші пропозиції FGA6065ADF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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FGA6065ADF | Виробник : onsemi |
 Description: IGBT TRENCH/FS 650V 120A TO3PNPower - Max: 306 W Current - Collector Pulsed (Icm): 180 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 120 A Part Status: Obsolete Gate Charge: 84 nC Test Condition: 400V, 60A, 6Ohm, 15V Switching Energy: 2.46mJ (on), 520µJ (off) Td (on/off) @ 25°C: 25.6ns/71ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PN Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Reverse Recovery Time (trr): 110 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
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