Технічний опис FGA6530WDF ON Semiconductor / Fairchild
Description: IGBT TRENCH FS 650V 60A TO-3PN, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A, Reverse Recovery Time (trr): 81 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube, Power - Max: 176 W, Current - Collector Pulsed (Icm): 90 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 60 A, Gate Charge: 37.4 nC, Test Condition: 400V, 30A, 6Ohm, 15V, Switching Energy: 960µJ (on), 162µJ (off), Td (on/off) @ 25°C: 12ns/42.4ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-3PN.
Інші пропозиції FGA6530WDF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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FGA6530WDF | Виробник : onsemi |
Description: IGBT TRENCH FS 650V 60A TO-3PNVce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Reverse Recovery Time (trr): 81 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube Power - Max: 176 W Current - Collector Pulsed (Icm): 90 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 60 A Gate Charge: 37.4 nC Test Condition: 400V, 30A, 6Ohm, 15V Switching Energy: 960µJ (on), 162µJ (off) Td (on/off) @ 25°C: 12ns/42.4ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PN |
товару немає в наявності |



