Технічний опис FGA90N33ATDTU
Description: IGBT, 90A, 330V, N-CHANNEL, Packaging: Bulk, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 23 ns, Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 20A, Supplier Device Package: TO-3P, IGBT Type: Trench, Gate Charge: 95 nC, Part Status: Active, Current - Collector (Ic) (Max): 90 A, Voltage - Collector Emitter Breakdown (Max): 330 V, Current - Collector Pulsed (Icm): 330 A, Power - Max: 223 W.
Інші пропозиції FGA90N33ATDTU
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FGA90N33ATDTU | Виробник : ON Semiconductor | Trans IGBT Chip N-CH 330V 90A 223000mW 3-Pin(3+Tab) TO-3P Tube |
товар відсутній |
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FGA90N33ATDTU | Виробник : ON Semiconductor | Trans IGBT Chip N-CH 330V 90A 223W 3-Pin(3+Tab) TO-3P Tube |
товар відсутній |
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FGA90N33ATDTU | Виробник : ON Semiconductor | Trans IGBT Chip N-CH 330V 90A 223W 3-Pin(3+Tab) TO-3P Tube |
товар відсутній |
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FGA90N33ATDTU | Виробник : ON Semiconductor | Trans IGBT Chip N-CH 330V 90A 223W 3-Pin(3+Tab) TO-3P Tube |
товар відсутній |
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FGA90N33ATDTU | Виробник : onsemi |
Description: IGBT 330V 90A 223W TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 23 ns Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 20A Supplier Device Package: TO-3P IGBT Type: Trench Gate Charge: 95 nC Part Status: Obsolete Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 330 V Current - Collector Pulsed (Icm): 330 A Power - Max: 223 W |
товар відсутній |
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FGA90N33ATDTU | Виробник : Fairchild Semiconductor |
Description: IGBT, 90A, 330V, N-CHANNEL Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 23 ns Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 20A Supplier Device Package: TO-3P IGBT Type: Trench Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 330 V Current - Collector Pulsed (Icm): 330 A Power - Max: 223 W |
товар відсутній |
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FGA90N33ATDTU | Виробник : onsemi / Fairchild | IGBT Transistors 330V 90A PDP Trench |
товар відсутній |