FGB40T65SPD-F085 onsemi
Виробник: onsemi
Description: IGBT TRENCH FS 650V 80A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/35ns
Switching Energy: 970µJ (on), 280µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 36 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 267 W
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Технічний опис FGB40T65SPD-F085 onsemi
Description: IGBT TRENCH FS 650V 80A TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 34 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A, Supplier Device Package: TO-263 (D2Pak), IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18ns/35ns, Switching Energy: 970µJ (on), 280µJ (off), Test Condition: 400V, 40A, 6Ohm, 15V, Gate Charge: 36 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 267 W.
Інші пропозиції FGB40T65SPD-F085 за ціною від 149.42 грн до 447.33 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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FGB40T65SPD-F085 | ONSEMI |
Description: ONSEMI - FGB40T65SPD-F085 - IGBT, n-Kanal, 80 A, 2 V, 267 W, 650 V, TO-263AB, 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES isCanonical: N Kollektor-Emitter-Sättigungsspannung: 2V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 267W Bauform - Transistor: TO-263AB Dauerkollektorstrom: 80A Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C SVHC: Lead (25-Jun-2025) |
на замовлення 2969 шт: термін постачання 21-31 дні (днів) |
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FGB40T65SPD-F085 | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 40A; 134W; D2PAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate-emitter voltage: ±20V Power dissipation: 134W Pulsed collector current: 120A Application: ignition systems Version: ESD Features of semiconductor devices: logic level Gate charge: 36nC |
на замовлення 726 шт: термін постачання 14-30 дні (днів) |
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FGB40T65SPD-F085 | ONSEMI |
Description: ONSEMI - FGB40T65SPD-F085 - IGBT, n-Kanal, 80 A, 2 V, 267 W, 650 V, TO-263AB, 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Kollektor-Emitter-Sättigungsspannung: 2V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 267W Bauform - Transistor: TO-263AB Dauerkollektorstrom: 80A Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C SVHC: Lead (25-Jun-2025) |
на замовлення 2969 шт: термін постачання 21-31 дні (днів) |
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FGB40T65SPD-F085 | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/35ns Switching Energy: 970µJ (on), 280µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 36 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 267 W |
на замовлення 2121 шт: термін постачання 21-31 дні (днів) |
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FGB40T65SPD-F085 | onsemi |
IGBTs Trench IGBT |
на замовлення 3903 шт: термін постачання 21-30 дні (днів) |
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| FGB40T65SPD-F085 |
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Виробник: ONSEMI
Description: ONSEMI - FGB40T65SPD-F085 - IGBT, n-Kanal, 80 A, 2 V, 267 W, 650 V, TO-263AB, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Kollektor-Emitter-Sättigungsspannung: 2V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 267W
Bauform - Transistor: TO-263AB
Dauerkollektorstrom: 80A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: No
Betriebstemperatur, max.: 175°C
SVHC: Lead (25-Jun-2025)
Description: ONSEMI - FGB40T65SPD-F085 - IGBT, n-Kanal, 80 A, 2 V, 267 W, 650 V, TO-263AB, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Kollektor-Emitter-Sättigungsspannung: 2V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 267W
Bauform - Transistor: TO-263AB
Dauerkollektorstrom: 80A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: No
Betriebstemperatur, max.: 175°C
SVHC: Lead (25-Jun-2025)
на замовлення 2969 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 208.86 грн |
| 500+ | 164.93 грн |
| 1000+ | 149.42 грн |
| FGB40T65SPD-F085 |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Application: ignition systems
Version: ESD
Features of semiconductor devices: logic level
Gate charge: 36nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Application: ignition systems
Version: ESD
Features of semiconductor devices: logic level
Gate charge: 36nC
на замовлення 726 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 402.01 грн |
| 5+ | 303.73 грн |
| 10+ | 268.94 грн |
| 25+ | 226.52 грн |
| 100+ | 224.83 грн |
| FGB40T65SPD-F085 |
|
Виробник: ONSEMI
Description: ONSEMI - FGB40T65SPD-F085 - IGBT, n-Kanal, 80 A, 2 V, 267 W, 650 V, TO-263AB, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 2V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 267W
Bauform - Transistor: TO-263AB
Dauerkollektorstrom: 80A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: Lead (25-Jun-2025)
Description: ONSEMI - FGB40T65SPD-F085 - IGBT, n-Kanal, 80 A, 2 V, 267 W, 650 V, TO-263AB, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 2V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 267W
Bauform - Transistor: TO-263AB
Dauerkollektorstrom: 80A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: Lead (25-Jun-2025)
на замовлення 2969 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 431.71 грн |
| 10+ | 289.45 грн |
| 100+ | 208.86 грн |
| 500+ | 164.93 грн |
| 1000+ | 149.42 грн |
| FGB40T65SPD-F085 |
|
Виробник: onsemi
Description: IGBT TRENCH FS 650V 80A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/35ns
Switching Energy: 970µJ (on), 280µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 36 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 267 W
Description: IGBT TRENCH FS 650V 80A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/35ns
Switching Energy: 970µJ (on), 280µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 36 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 267 W
на замовлення 2121 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 436.90 грн |
| 10+ | 281.91 грн |
| 100+ | 203.27 грн |
| FGB40T65SPD-F085 |
|
Виробник: onsemi
IGBTs Trench IGBT
IGBTs Trench IGBT
на замовлення 3903 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 447.33 грн |
| 10+ | 300.71 грн |
| 100+ | 188.19 грн |
| 500+ | 167.04 грн |