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FGD3N60UNDF

FGD3N60UNDF onsemi


fgd3n60undf-d.pdf
Виробник: onsemi
Description: IGBT NPT 600V 6A TO-252AA
Power - Max: 60 W
Current - Collector Pulsed (Icm): 9 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 6 A
Gate Charge: 1.6 nC
Test Condition: 400V, 3A, 10Ohm, 15V
Switching Energy: 52µJ (on), 30µJ (off)
Td (on/off) @ 25°C: 5.5ns/22ns
IGBT Type: NPT
Supplier Device Package: TO-252AA
Vce(on) (Max) @ Vge, Ic: 2.52V @ 15V, 3A
Reverse Recovery Time (trr): 21 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Технічний опис FGD3N60UNDF onsemi

Description: IGBT NPT 600V 6A TO-252AA, Power - Max: 60 W, Current - Collector Pulsed (Icm): 9 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 6 A, Gate Charge: 1.6 nC, Test Condition: 400V, 3A, 10Ohm, 15V, Switching Energy: 52µJ (on), 30µJ (off), Td (on/off) @ 25°C: 5.5ns/22ns, IGBT Type: NPT, Supplier Device Package: TO-252AA, Vce(on) (Max) @ Vge, Ic: 2.52V @ 15V, 3A, Reverse Recovery Time (trr): 21 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).

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FGD3N60UNDF FGD3N60UNDF Виробник : onsemi / Fairchild FGD3N60UNDF_D-1809374.pdf IGBT Transistors 600V, 3A Short Circuit Rated IGBT
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