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FGD5T120SH onsemi / Fairchild

Name: FGD5T120SH
Brand: onsemi / Fairchild
SKU: 4958887-4
Price: 44.46 UAH
Availability: InStock

Виробник: onsemi / Fairchild
IGBT Transistors 1200V 5A Field Stop Trench IGBT

на замовлення 23857 шт:

термін постачання 1250-1259 дні (днів)

Кількість	Ціна без ПДВ
3+	114.5 грн
10+	93.67 грн
100+	64.56 грн
250+	60.15 грн
500+	54.54 грн
1000+	46.73 грн
2500+	44.46 грн

Мінімальне замовлення: 3

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Технічний опис FGD5T120SH onsemi / Fairchild

Description: IGBT 1200V 5A FS3 DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 5A, Supplier Device Package: TO-252AA, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 4.8ns/24.8ns, Switching Energy: 247µJ (on), 94µJ (off), Test Condition: 600V, 5A, 30Ohm, 15V, Gate Charge: 6.7 nC, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 12.5 A, Power - Max: 69 W.

Інші пропозиції FGD5T120SH

Назва	Виробник	Інформація	Доступність
FGD5T120SH	Виробник : ON Semiconductor	Trans IGBT Chip N-CH 1200V 10A 69000mW 3-Pin(2+Tab) DPAK T/R	товар відсутній
FGD5T120SH	Виробник : ONSEMI	Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 5A; 28W; DPAK Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±25V Collector current: 5A Pulsed collector current: 12.5A Type of transistor: IGBT Power dissipation: 28W Kind of package: reel; tape Gate charge: 6.7nC Mounting: SMD Case: DPAK кількість в упаковці: 1 шт	товар відсутній
FGD5T120SH	Виробник : onsemi	Description: IGBT 1200V 5A FS3 DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 5A Supplier Device Package: TO-252AA IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 4.8ns/24.8ns Switching Energy: 247µJ (on), 94µJ (off) Test Condition: 600V, 5A, 30Ohm, 15V Gate Charge: 6.7 nC Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 12.5 A Power - Max: 69 W	товар відсутній
FGD5T120SH	Виробник : onsemi	Description: IGBT 1200V 5A FS3 DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 5A Supplier Device Package: TO-252AA IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 4.8ns/24.8ns Switching Energy: 247µJ (on), 94µJ (off) Test Condition: 600V, 5A, 30Ohm, 15V Gate Charge: 6.7 nC Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 12.5 A Power - Max: 69 W	товар відсутній
FGD5T120SH	Виробник : ONSEMI	Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 5A; 28W; DPAK Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±25V Collector current: 5A Pulsed collector current: 12.5A Type of transistor: IGBT Power dissipation: 28W Kind of package: reel; tape Gate charge: 6.7nC Mounting: SMD Case: DPAK	товар відсутній