Технічний опис FGH30N60LSDTU ON Semiconductor
Description: IGBT 600V 60A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 35 ns, Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A, Supplier Device Package: TO-247-3, Td (on/off) @ 25°C: 18ns/250ns, Switching Energy: 1.1mJ (on), 21mJ (off), Test Condition: 400V, 30A, 6.8Ohm, 15V, Gate Charge: 225 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 480 W.
Інші пропозиції FGH30N60LSDTU
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FGH30N60LSDTU | Виробник : ON Semiconductor |
 Trans IGBT Chip N-CH 600V 60A 480000mW 3-Pin(3+Tab) TO-247 Tube |
товару немає в наявності |
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FGH30N60LSDTU | Виробник : ON Semiconductor |
Trans IGBT Chip N-CH 600V 60A 480000mW 3-Pin(3+Tab) TO-247 Tube |
товару немає в наявності |
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FGH30N60LSDTU | Виробник : onsemi |
Description: IGBT 600V 60A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: 18ns/250ns Switching Energy: 1.1mJ (on), 21mJ (off) Test Condition: 400V, 30A, 6.8Ohm, 15V Gate Charge: 225 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 90 A Power - Max: 480 W |
товару немає в наявності |
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FGH30N60LSDTU | Виробник : onsemi / Fairchild |
IGBT Transistors PDD |
товару немає в наявності |