FGH40N60SFDTU-F085 ON Semiconductor
Виробник: ON SemiconductorTrans IGBT Chip N-CH 600V 80A 290000mW Automotive 3-Pin(3+Tab) TO-247 Tube
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Технічний опис FGH40N60SFDTU-F085 ON Semiconductor
Description: IGBT FIELD STOP 600V 80A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 68 ns, Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Field Stop, Td (on/off) @ 25°C: 21ns/138ns, Switching Energy: 1.23mJ (on), 380µJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 121 nC, Grade: Automotive, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 290 W, Qualification: AEC-Q101.
Інші пропозиції FGH40N60SFDTU-F085
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FGH40N60SFDTU-F085 | Виробник : onsemi |
Description: IGBT FIELD STOP 600V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 68 ns Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 21ns/138ns Switching Energy: 1.23mJ (on), 380µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 121 nC Grade: Automotive Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 290 W Qualification: AEC-Q101 |
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