Технічний опис FGH60T65SHD-F155 ON Semiconductor
Description: IGBT TRENCH FS 650V 120A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 34.6 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 26ns/87ns, Switching Energy: 1.69mJ (on), 630µJ (off), Test Condition: 400V, 60A, 6Ohm, 15V, Gate Charge: 102 nC, Part Status: Active, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 180 A, Power - Max: 349 W.
Інші пропозиції FGH60T65SHD-F155
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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FGH60T65SHD-F155 | Виробник : ON Semiconductor |
 Trans IGBT Chip N-CH 650V 120A 349W 3-Pin(3+Tab) TO-247 Tube |
товару немає в наявності |
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FGH60T65SHD-F155 | Виробник : ONSEMI |
Description: ONSEMI - FGH60T65SHD-F155 - IGBT, 650 V, 60 A FIELD STOP TRENCH SVHC: Lead (17-Jan-2022) |
товару немає в наявності |
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FGH60T65SHD-F155 | Виробник : onsemi |
Description: IGBT TRENCH FS 650V 120A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34.6 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 26ns/87ns Switching Energy: 1.69mJ (on), 630µJ (off) Test Condition: 400V, 60A, 6Ohm, 15V Gate Charge: 102 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 349 W |
товару немає в наявності |
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| FGH60T65SHD-F155 | Виробник : onsemi |
IGBTs IGBT, 650 V, 60 A Field Stop Trench |
товару немає в наявності |
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| FGH60T65SHD-F155 | Виробник : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 174W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 174W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 102nC Kind of package: tube |
товару немає в наявності |