Технічний опис FGH75N60UFTU ON Semiconductor
Description: IGBT 600V 150A 452W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A, Supplier Device Package: TO-247-3, IGBT Type: Field Stop, Td (on/off) @ 25°C: 27ns/128ns, Switching Energy: 3.05mJ (on), 1.35mJ (off), Test Condition: 400V, 75A, 3Ohm, 15V, Gate Charge: 250 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 225 A, Power - Max: 452 W.
Інші пропозиції FGH75N60UFTU
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FGH75N60UFTU | Виробник : ON Semiconductor |
 Trans IGBT Chip N-CH 600V 150A 452000mW 3-Pin(3+Tab) TO-247 Tube |
товару немає в наявності |
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FGH75N60UFTU | Виробник : onsemi |
Description: IGBT 600V 150A 452W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 27ns/128ns Switching Energy: 3.05mJ (on), 1.35mJ (off) Test Condition: 400V, 75A, 3Ohm, 15V Gate Charge: 250 nC Part Status: Obsolete Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 225 A Power - Max: 452 W |
товару немає в наявності |
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FGH75N60UFTU | Виробник : onsemi / Fairchild |
IGBT Transistors N-CH / 600V 75A FS Planar |
товару немає в наявності |