Технічний опис FGH75T65SQDTL4 ON Semiconductor
Description: IGBT TRENCH FS 650V 150A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 76 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A, Supplier Device Package: TO-247-4, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 44ns/276ns, Switching Energy: 307µJ (on), 266µJ (off), Test Condition: 400V, 18.8A, 15Ohm, 15V, Gate Charge: 128 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 300 A.
Інші пропозиції FGH75T65SQDTL4
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FGH75T65SQDTL4 | Виробник : ONSEMI |
Description: ONSEMI - FGH75T65SQDTL4 - IGBT, 650 V, 75 A FIELD STOP TRENCH SVHC: No SVHC (19-Jan-2021) |
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FGH75T65SQDTL4 | Виробник : onsemi |
Description: IGBT TRENCH FS 650V 150A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 76 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: TO-247-4 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/276ns Switching Energy: 307µJ (on), 266µJ (off) Test Condition: 400V, 18.8A, 15Ohm, 15V Gate Charge: 128 nC Part Status: Obsolete Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A |
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FGH75T65SQDTL4 | Виробник : onsemi / Fairchild | IGBT Transistors 650V FS4 Trench IGBT |
товар відсутній |