Технічний опис FGHL50T65LQDT ON Semiconductor
Description: IGBT TRENCH FS 650V 80A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 75 ns, Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 50A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 31ns/408ns, Switching Energy: 510µJ (on), 880µJ (off), Test Condition: 400V, 25A, 4.7Ohm, 15V, Gate Charge: 509 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 341 W.
Інші пропозиції FGHL50T65LQDT
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
FGHL50T65LQDT | Виробник : onsemi |
 Description: IGBT TRENCH FS 650V 80A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 50A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 31ns/408ns Switching Energy: 510µJ (on), 880µJ (off) Test Condition: 400V, 25A, 4.7Ohm, 15V Gate Charge: 509 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 341 W |
товару немає в наявності |
|
 |
FGHL50T65LQDT | Виробник : onsemi |
IGBTs IGBT - 650 V 50 A FS4 low Vce(sat) IGBT with full rated copack diode |
товару немає в наявності |
|
| FGHL50T65LQDT | Виробник : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3 Mounting: THT Case: TO247-3 Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 50A Power dissipation: 170W Pulsed collector current: 200A Kind of package: tube Collector-emitter voltage: 650V Gate charge: 509nC |
товару немає в наявності |