FGHL50T65MQDTL4 ONSEMI
Виробник: ONSEMI
Description: ONSEMI - FGHL50T65MQDTL4 - IGBT, 80 A, 1.45 V, 268 W, 650 V, TO-247, 4 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.45V
Verlustleistung: 268W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247
Dauerkollektorstrom: 80A
Anzahl der Pins: 4Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 175°C
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Технічний опис FGHL50T65MQDTL4 ONSEMI
Description: IGBT TRENCH FS 650V 80A TO-247, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 79 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A, Supplier Device Package: TO-247-4L, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 50ns/336ns, Switching Energy: 1mJ (on), 850µJ (off), Test Condition: 400V, 50A, 30Ohm, 15V, Gate Charge: 99 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 268 W.
Інші пропозиції FGHL50T65MQDTL4 за ціною від 156.01 грн до 441.36 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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FGHL50T65MQDTL4 | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 79 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A Supplier Device Package: TO-247-4L IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 50ns/336ns Switching Energy: 1mJ (on), 850µJ (off) Test Condition: 400V, 50A, 30Ohm, 15V Gate Charge: 99 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 268 W |
на замовлення 3809 шт: термін постачання 21-31 дні (днів) |
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FGHL50T65MQDTL4 | onsemi |
IGBTs FS4 MID SPEED IGBT 650V 50A TO247-4L WITH FULL RATED CURRENT DIODE |
на замовлення 321 шт: термін постачання 21-30 дні (днів) |
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| FGHL50T65MQDTL4 |
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Виробник: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 79 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/336ns
Switching Energy: 1mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 30Ohm, 15V
Gate Charge: 99 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
Description: IGBT TRENCH FS 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 79 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/336ns
Switching Energy: 1mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 30Ohm, 15V
Gate Charge: 99 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
на замовлення 3809 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 431.03 грн |
| 10+ | 279.03 грн |
| 450+ | 171.12 грн |
| 900+ | 156.01 грн |
| FGHL50T65MQDTL4 |
|
Виробник: onsemi
IGBTs FS4 MID SPEED IGBT 650V 50A TO247-4L WITH FULL RATED CURRENT DIODE
IGBTs FS4 MID SPEED IGBT 650V 50A TO247-4L WITH FULL RATED CURRENT DIODE
на замовлення 321 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 441.36 грн |
| 10+ | 291.36 грн |
| 120+ | 180.18 грн |