FGPF10N60UNDF ON Semiconductor
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
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Технічний опис FGPF10N60UNDF ON Semiconductor
Description: IGBT NPT 600V 20A TO-220F-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 37.7 ns, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A, Supplier Device Package: TO-220F-3, IGBT Type: NPT, Td (on/off) @ 25°C: 8ns/52.2ns, Switching Energy: 150µJ (on), 50µJ (off), Test Condition: 400V, 10A, 10Ohm, 15V, Gate Charge: 37 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 30 A, Power - Max: 42 W.
Інші пропозиції FGPF10N60UNDF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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FGPF10N60UNDF | Виробник : ON Semiconductor |
 Trans IGBT Chip N-CH 600V 20A 42000mW 3-Pin(3+Tab) TO-220FP Tube |
товару немає в наявності |
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FGPF10N60UNDF | Виробник : onsemi |
Description: IGBT NPT 600V 20A TO-220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 37.7 ns Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A Supplier Device Package: TO-220F-3 IGBT Type: NPT Td (on/off) @ 25°C: 8ns/52.2ns Switching Energy: 150µJ (on), 50µJ (off) Test Condition: 400V, 10A, 10Ohm, 15V Gate Charge: 37 nC Part Status: Obsolete Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 42 W |
товару немає в наявності |