FGY40T120SMD onsemi
Виробник: onsemiDescription: IGBT TRENCH FS 1200V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/475ns
Switching Energy: 2.7mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 370 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 882 W
на замовлення 398 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 765.94 грн |
| 30+ | 597.28 грн |
| 120+ | 562.16 грн |
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Технічний опис FGY40T120SMD onsemi
Description: IGBT TRENCH FS 1200V 80A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 65 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A, Supplier Device Package: TO-247, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 40ns/475ns, Switching Energy: 2.7mJ (on), 1.1mJ (off), Test Condition: 600V, 40A, 10Ohm, 15V, Gate Charge: 370 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 882 W.
Інші пропозиції FGY40T120SMD за ціною від 485.48 грн до 820.68 грн
| Фото | Назва | Виробник | Інформація |
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FGY40T120SMD | Виробник : onsemi / Fairchild |
IGBT Transistors 1200 V, 40 A Field Stop Trench IGBT |
на замовлення 426 шт: термін постачання 21-30 дні (днів) |
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FGY40T120SMD | Виробник : ON Semiconductor |
Trans IGBT Chip N-CH 1200V 80A 882000mW 3-Pin(3+Tab) Power TO-247 Tube |
товар відсутній |
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| FGY40T120SMD | Виробник : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 441W; TO247H03 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±25V Collector current: 40A Pulsed collector current: 160A Type of transistor: IGBT Power dissipation: 441W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.37µC Mounting: THT Case: TO247H03 кількість в упаковці: 450 шт |
товар відсутній |
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| FGY40T120SMD | Виробник : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 441W; TO247H03 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±25V Collector current: 40A Pulsed collector current: 160A Type of transistor: IGBT Power dissipation: 441W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.37µC Mounting: THT Case: TO247H03 |
товар відсутній |