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FII30-12E IXYS


FII30-12E.pdf Виробник: IXYS
Description: IGBT H BRIDGE 1200V 33A I4PAK5
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 20A
NTC Thermistor: No
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 1.2 nF @ 25 V
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Технічний опис FII30-12E IXYS

Description: IGBT H BRIDGE 1200V 33A I4PAK5, Packaging: Tube, Package / Case: i4-Pac™-5, Mounting Type: Through Hole, Input: Standard, Configuration: Half Bridge, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 20A, NTC Thermistor: No, Supplier Device Package: ISOPLUS i4-PAC™, IGBT Type: NPT, Part Status: Obsolete, Current - Collector (Ic) (Max): 33 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 150 W, Current - Collector Cutoff (Max): 200 µA, Input Capacitance (Cies) @ Vce: 1.2 nF @ 25 V.