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FIO50-12BD IXYS


FIO50-12BD.pdf Виробник: IXYS
Description: IGBT 1200V 50A 200W I4PAC5
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Switching Energy: 4.6mJ (on), 2.2mJ (off)
Test Condition: 600V, 30A, 39Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
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Технічний опис FIO50-12BD IXYS

Description: IGBT 1200V 50A 200W I4PAC5, Packaging: Tube, Package / Case: i4-Pac™-5, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 150 ns, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A, Supplier Device Package: ISOPLUS i4-PAC™, IGBT Type: NPT, Switching Energy: 4.6mJ (on), 2.2mJ (off), Test Condition: 600V, 30A, 39Ohm, 15V, Gate Charge: 150 nC, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 200 W.