Технічний опис FIO50-12BD
Description: IGBT NPT 1200V 50A ISOPLUS I4PAC, Packaging: Tube, Package / Case: i4-Pac™-5, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 150 ns, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A, Supplier Device Package: ISOPLUS i4-PAC™, IGBT Type: NPT, Switching Energy: 4.6mJ (on), 2.2mJ (off), Test Condition: 600V, 30A, 39Ohm, 15V, Gate Charge: 150 nC, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 200 W.
Інші пропозиції FIO50-12BD
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
FIO50-12BD | Виробник : IXYS |
Description: IGBT NPT 1200V 50A ISOPLUS I4PACPackaging: Tube Package / Case: i4-Pac™-5 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 150 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A Supplier Device Package: ISOPLUS i4-PAC™ IGBT Type: NPT Switching Energy: 4.6mJ (on), 2.2mJ (off) Test Condition: 600V, 30A, 39Ohm, 15V Gate Charge: 150 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 200 W |
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