Технічний опис FJ4B01110L1 Panasonic
Description: MOSFET P-CH 12V 1.4A ALGA004, Packaging: Tape & Reel (TR), Package / Case: 4-XFLGA, CSP, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 85°C (TA), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), Rds On (Max) @ Id, Vgs: 153mOhm @ 700mA, 4.5V, Power Dissipation (Max): 340mW (Ta), Vgs(th) (Max) @ Id: 1V @ 598µA, Supplier Device Package: ALGA004-W-0606-RA01, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 226 pF @ 10 V.
Інші пропозиції FJ4B01110L1
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FJ4B01110L1 | Виробник : Panasonic Electronic Components |
 Description: MOSFET P-CH 12V 1.4A ALGA004Packaging: Tape & Reel (TR) Package / Case: 4-XFLGA, CSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 153mOhm @ 700mA, 4.5V Power Dissipation (Max): 340mW (Ta) Vgs(th) (Max) @ Id: 1V @ 598µA Supplier Device Package: ALGA004-W-0606-RA01 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 226 pF @ 10 V |
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