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Технічний опис FJ4B01120L1 Panasonic
Description: MOSFET P-CH 12V 2.6A ULGA004, Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Obsolete, Supplier Device Package: ULGA004-W-1010-RA01, Vgs(th) (Max) @ Id: 1V @ 2mA, Power Dissipation (Max): 370mW (Ta), Rds On (Max) @ Id, Vgs: 51mOhm @ 2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 85°C (TA), Mounting Type: Surface Mount, Package / Case: 4-XFLGA, CSP, Packaging: Tape & Reel (TR).
Інші пропозиції FJ4B01120L1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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FJ4B01120L1 | Виробник : Panasonic Electronic Components |
 Description: MOSFET P-CH 12V 2.6A ULGA004Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Obsolete Supplier Device Package: ULGA004-W-1010-RA01 Vgs(th) (Max) @ Id: 1V @ 2mA Power Dissipation (Max): 370mW (Ta) Rds On (Max) @ Id, Vgs: 51mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 4-XFLGA, CSP Packaging: Tape & Reel (TR) |
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