Технічний опис FJA4310OTU On Semiconductor
Description: TRANS NPN 140V 10A TO3P, Power - Max: 100 W, Voltage - Collector Emitter Breakdown (Max): 140 V, Current - Collector (Ic) (Max): 10 A, Part Status: Obsolete, Supplier Device Package: TO-3P, Frequency - Transition: 30MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.
Інші пропозиції FJA4310OTU
| Фото | Назва | Виробник | Інформація |
Доступність |
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FJA4310OTU | Виробник : onsemi |
 Description: TRANS NPN 140V 10A TO3PPower - Max: 100 W Voltage - Collector Emitter Breakdown (Max): 140 V Current - Collector (Ic) (Max): 10 A Part Status: Obsolete Supplier Device Package: TO-3P Frequency - Transition: 30MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
товару немає в наявності |
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FJA4310OTU | Виробник : onsemi / Fairchild |
Bipolar Transistors - BJT NPN Si Transistor Epitaxial |
товару немає в наявності |