FJN3314RTA ON Semiconductor / Fairchild

Description: TRANS PREBIAS NPN 300MW TO92-3, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 4.7 kOhms, Frequency - Transition: 250 MHz, Power - Max: 300 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Obsolete, Supplier Device Package: TO-92-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Tape & Box (TB).