FJN4301RTA

FJN4301RTA ON Semiconductor / Fairchild


FJN4301R-1300721.pdf
Виробник: ON Semiconductor / Fairchild
Bipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial
на замовлення 15450 шт:

термін постачання 21-30 дні (днів)
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Технічний опис FJN4301RTA ON Semiconductor / Fairchild

Description: TRANS PREBIAS PNP 50V TO92-3, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: TO-92-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Tape & Box (TB), Resistors Included: R1 and R2, Resistor - Emitter Base (R2): 4.7 kOhms, Resistor - Base (R1): 4.7 kOhms, Frequency - Transition: 200 MHz, Power - Max: 300 mW.

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FJN4301RTA FJN4301RTA Виробник : onsemi fjn4301r-d.pdf Description: TRANS PREBIAS PNP 50V TO92-3
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 300 mW
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