Технічний опис FJP9100TU ON Semiconductor
Description: TRANS NPN DARL 275V 4A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 2A, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 500mA, 5V, Supplier Device Package: TO-220-3, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 275 V, Power - Max: 40 W.
Інші пропозиції FJP9100TU
Фото | Назва | Виробник | Інформація |
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FJP9100TU | Виробник : onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 2A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 500mA, 5V Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 275 V Power - Max: 40 W |
товару немає в наявності |
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FJP9100TU | Виробник : onsemi / Fairchild |
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товару немає в наявності |