FJPF13009H1TU Fairchild Semiconductor
Виробник: Fairchild Semiconductor
Description: POWER BIPOLAR TRANSISTOR, 12A, 4
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220F-3 (Y-Forming)
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 50 W
Description: POWER BIPOLAR TRANSISTOR, 12A, 4
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220F-3 (Y-Forming)
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 50 W
на замовлення 30476 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
337+ | 60.18 грн |
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Технічний опис FJPF13009H1TU Fairchild Semiconductor
Description: POWER BIPOLAR TRANSISTOR, 12A, 4, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A, DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 8A, 5V, Frequency - Transition: 4MHz, Supplier Device Package: TO-220F-3 (Y-Forming), Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 400 V, Power - Max: 50 W.
Інші пропозиції FJPF13009H1TU за ціною від 61.55 грн до 159.67 грн
Фото | Назва | Виробник | Інформація |
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FJPF13009H1TU | Виробник : onsemi / Fairchild | Bipolar Transistors - BJT NPN 400V 12A |
на замовлення 632 шт: термін постачання 21-30 дні (днів) |
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FJPF13009H1TU | Виробник : ON Semiconductor | Trans GP BJT NPN 400V 12A 50000mW 3-Pin(3+Tab) TO-220FP Tube |
товар відсутній |
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FJPF13009H1TU | Виробник : ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 12A; 50W; TO220FP Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 12A Power dissipation: 50W Case: TO220FP Current gain: 15...28 Mounting: THT Kind of package: tube Frequency: 4MHz кількість в упаковці: 1 шт |
товар відсутній |
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FJPF13009H1TU | Виробник : onsemi |
Description: TRANS NPN 400V 12A TO220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 8A, 5V Frequency - Transition: 4MHz Supplier Device Package: TO-220F-3 (Y-Forming) Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 50 W |
товар відсутній |
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FJPF13009H1TU | Виробник : ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 12A; 50W; TO220FP Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 12A Power dissipation: 50W Case: TO220FP Current gain: 15...28 Mounting: THT Kind of package: tube Frequency: 4MHz |
товар відсутній |