FJV1845EMTF Fairchild Semiconductor
Виробник: Fairchild Semiconductor
Description: TRANS NPN 120V 0.05A SOT23
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 50 mA
Supplier Device Package: SOT-23
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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Технічний опис FJV1845EMTF Fairchild Semiconductor
Description: TRANS NPN 120V 0.05A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V, Frequency - Transition: 110MHz, Supplier Device Package: SOT-23-3, Current - Collector (Ic) (Max): 50 mA, Voltage - Collector Emitter Breakdown (Max): 120 V, Power - Max: 300 mW.
Інші пропозиції FJV1845EMTF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FJV1845EMTF | Виробник : onsemi |
Description: TRANS NPN 120V 0.05A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V Frequency - Transition: 110MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 300 mW |
товару немає в наявності |
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FJV1845EMTF | Виробник : onsemi |
Description: TRANS NPN 120V 0.05A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V Frequency - Transition: 110MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 300 mW |
товару немає в наявності |
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FJV1845EMTF | Виробник : onsemi / Fairchild |
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товару немає в наявності |
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| FJV1845EMTF | Виробник : STMicroelectronics |
Bipolar Transistors - BJT |
товару немає в наявності |