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Технічний опис FK4B01100L1 Panasonic
Description: MOSFET N-CH 12V 3.4A XLGA004, Rds On (Max) @ Id, Vgs: 30mOhm @ 1.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 85°C (TA), Mounting Type: Surface Mount, Package / Case: 4-XFLGA, CSP, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Obsolete, Supplier Device Package: XLGA004-W-0808-RA01, Vgs(th) (Max) @ Id: 1V @ 236µA, Power Dissipation (Max): 360mW (Ta).
Інші пропозиції FK4B01100L1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
FK4B01100L1 | Виробник : Panasonic Electronic Components |
Description: MOSFET N-CH 12V 3.4A XLGA004Rds On (Max) @ Id, Vgs: 30mOhm @ 1.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 4-XFLGA, CSP Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Obsolete Supplier Device Package: XLGA004-W-0808-RA01 Vgs(th) (Max) @ Id: 1V @ 236µA Power Dissipation (Max): 360mW (Ta) |
товару немає в наявності |

