FMM110-015X2F IXYS
Виробник: IXYS
Description: MOSFET 2N-CH 150V 53A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 180W
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 53A
Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 55A, 10V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Description: MOSFET 2N-CH 150V 53A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 180W
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 53A
Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 55A, 10V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
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Технічний опис FMM110-015X2F IXYS
Description: MOSFET 2N-CH 150V 53A I4-PAC, Packaging: Tube, Package / Case: i4-Pac™-5, Mounting Type: Through Hole, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 180W, Drain to Source Voltage (Vdss): 150V, Current - Continuous Drain (Id) @ 25°C: 53A, Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V, Rds On (Max) @ Id, Vgs: 20mOhm @ 55A, 10V, Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: ISOPLUS i4-PAC™.
Інші пропозиції FMM110-015X2F
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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FMM110-015X2F | Виробник : IXYS |
 MOSFET DUAL PHASE LEGCONFIG 150V 53A MOSFET |
товару немає в наявності |